Dr. Narvaez holds a B.S. and M.S. in Physics from the Instituto Balserio-Universidad de Cuyo, Aregentina, and a Ph.D in Physics from the State University at Campinas (UNICAMP), Brazil.  He did post-graduate studies/work at Institute of Microstructural Sciences in Ottawa, Canada.

Gustavo has extensive research experience in theory and simulation of electrical, optical, transport, and vibrational properties of nanoscopic metals and semiconductors.  He has served as a reviewer of manuscrpits submitted for publication in the Physics Review B and Physics Review Letters since 2001. 

He has presented at numerous scientific conferences, and his publications include:

G.A. Narvaez, G. Bester, and A. Zunger, "Carrier relaxation mechanisms in self-assembled (In, Ga)As/GaAs quantum dots,":  Effieicent P→S Auger relaxation of electrons.: Physical Review B 74, 075403 (2006).

G.A. Narvaez, and A. Zunger, "Nominally forbidden transitions in the interband optical spectrum of quantum dots,": Physical Review B 74, 045316 (2006).

G.A. Narvaez, G. Bester, and A Zunger, "Excitons, biexcitons and trions in self-assembled (In,Ga)As/GaAs quantum dots: Recombination energies, polarization and radiative lifetimes vs dot height,": Physical Review B 72, 245318 (2005).

G.A. Narvaez, J. Kim, and J.W. Wilkins, "Effects of morphology on phonons in nanoscopic silver grains,": Physical Review B 72, 155411 (2005).

G.A. Narvaez, G. Kirczenow, "Electronic excitations and tunneling spectra of metallic nanograins,": Physical Review B 68, 245515 (2003).